Nanoelectronics in 2D

  • 15 December 2021
  • 13:00-14:00
  • DAV.1.108

Speaker: Dr Wenjing Yan (University of Nottingham)

Title: Nanoelectronics in 2D

Abstract: As miniaturization of electronic devices continues, new prototype devices based on completely different physical principles will need to be developed and investigated beyond the current Complementary Metal Oxide Semiconductor (CMOS) technology. These include new types of transistors that are small, fast, energy efficient, and that can operate on different functional physical properties, for example electron spins. This talk will present examples of new transistors based on two-dimensional van der Waals materials (2D-vdW). These transistors exploit the switchable nature of electron spins (spin transistor) or electronic dipoles (ferroelectric field effect transistor) to realise the memory functionality and information processing. Finally, the talk will also show how properties of coherent phonons can be used to reveal the fundamental properties of vdW force non-destructively.

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