New paper: Comparison of the charge transport properties of low and high flux grade Redlen CdZnTe crystals

Detector connected for measurements

A section of CdZnTe is connected to a ceramic PCB for alpha spectroscopy measurements.

This paper, published in the Journal of Instrumentation, compares two types of CdZnTe, a material used in X-ray and gamma-ray detection showing that high-flux CdZnTe offers improved behaviour under intense radiation, making it a strong candidate for use in next-generation synchrotron and free-electron laser facilities. Congratulations to Max Bishop, ARAMP PhD student, for his first peer-reviewed publication.

Abstract

CdZnTe is widely used in gamma ray radiation detection for medical imaging and security, with growing interest in CdZnTe for synchrotron and XFEL detector materials at X-ray fluxes in excess of 1010 photons·s-1mm-2. Understanding fundamental material properties allows for greater understanding of the relevancy of CdZnTe for use at photon light sources. This investigation uses alpha particle spectroscopy to directly compare the mobility-lifetime products (μτ) and mobilities (μ) of High-Flux (HF) and Low-Flux (LF) CdZnTe, produced by Redlen Technologies, and ascertain the differences in bulk charge carrier properties for both electrons and holes. This work presents average values of HF-CdZnTe to be μe = 920 cm V-1 s-1, μh = 38 cm V-1 s-1, μeτe = 4.4 × 10-3 cm V-1 s-1, μhτh = 1.6 × 10-4 cm V-1 s-1 and LF-CdZnTe with μe = 840 cm V-1 s-1, μeτe = 12 × 10-3 cm V-1 s-1, μhτh = 0.4 × 10-4 cm V-1 s-1.

Read the paper