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Fullerene Chemically Amplified Resists for Next Generation Lithography |
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AUTHOR(S) |
TITLE |
JOURNAL/CONFERENCE |
YEAR |
VOL. |
PAGE |
| A.P.G. Robinson; F.P. Gibbons, M. Manickam, J.A. Preece, R.E. Palmer, A.P.G. Robinson | Direct Electron-Beam Writing of Highly Conductive Wires in Functionalized Fullerene Films | Small | 2009 | 5 | 2750 |
| A.P.G. Robinson; J. Manyam, F.P. Gibbons, S. Diegoli, M. Manickam, J.A. Preece, R.E. Palmer, A.P.G. Robinson | Chemically amplified fullerene resists for e-beam lithography | P. Soc. Photo-Opt. Inst. | 2008 | 6923 | 69230M |
| A.P.G. Robinson; J. Manyam, M. Manickam, J.A. Preece, R.E. Palmer, A.P.G. Robinson | Low Activation Energy Fullerene Molecular Resist | P. Soc. Photo-Opt. Inst. | 2009 | 7273 | 72733D |
| A.P.G. Robinson; X. Chen, R.E. Palmer, A.P.G. Robinson | A high resolution water soluble fullerene molecular resist for electron beam lithography | Nanotechnology | 2008 | 19 | 275308 |
| A.P.G. Robinson; J. Manyam, M. Manickam, J.A. Preece, R.E. Palmer, A.P.G. Robinson | Characterization of the Effects of Base Additives on a Fullerene Chemically Amplified Resist | P. Soc. Photo-Opt. Inst. | 2010 | 7639 | 76391N |
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